Method for forming multi-layer resist pattern

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

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430313, 430314, 430323, 430324, 430942, 15665911, 15666111, 2504923, 25049221, G03F 700

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active

057006261

ABSTRACT:
A method for forming a multi-layer resist (MLR) pattern capable of preventing a generation of a charge-up effect in an exposure to electron beams and reducing alignment detect errors, and employing a silylation process, thereby achieving an improvement in resonance. The method includes the steps of forming a primary alignment mark on a silicon substrate formed with a cell part including a plurality of cell patterns having steps, depositing a lower deposition film over the silicon substrate, coating a lower resist film over the lower deposition film, subjecting a portion of the lower resist film to a light exposure and a development to form a secondary alignment mark, forming an intermediate insulating layer over the lower resist film, coating an upper resist film over the intermediate insulating layer to form a MLR film, subjecting the upper resist film to a light exposure to fork a latent image pattern at a non-exposed portion of the upper resist film, subjecting the resulting structure to a silylation to form a silylated layer over the upper resist film, etching the upper resist film to form an upper resist pattern and removing the silylated layer, patterning the intermediate insulating layer by use of the upper resist pattern as a mask, and etching the lower resist film by use of the intermediate insulating layer as a mask, thereby forming a MLR pattern.

REFERENCES:
patent: 4557797 (1985-12-01), Fuller
patent: 4642672 (1987-02-01), Kitakata
patent: 4683024 (1987-07-01), Miller
patent: 4826943 (1989-05-01), Ito
patent: 4891303 (1990-01-01), Garza
patent: 5030549 (1991-07-01), Hashimoto
patent: 5169494 (1992-12-01), Hashimoto

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