Plasma developable negative resist compositions for electron bea

Details Plasma developable negative resist compositions for electron bea Plasma developable negative resist compositions for electron bea

1985-05-14

1987-04-14

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430311, 430330, 430282, 430281, 430909, 430914, 430921, 430925, 156643, G03C 516

Patent

active

046578447

ABSTRACT:
A negative resist composition including a polymeric matrix material, a polymerizable monomer, and an onium salt radiation sensitive initiator. The monomer is polymerized by irradiating the resist with an e-beam, x-ray, or ultraviolet source and heating the exposed resist. The resist is developed by a dry etchant such as plasma or a reactive ion etchant.

REFERENCES:
patent: 4020234 (1977-04-01), Gardner
patent: 4136102 (1979-01-01), Crivello
patent: 4161405 (1979-07-01), Crivello
patent: 4241165 (1980-12-01), Hughes et al.
patent: 4244318 (1981-01-01), Chen
patent: 4245029 (1981-01-01), Crivello
patent: 4264703 (1981-04-01), Crivello
patent: 4278753 (1981-07-01), Crivello
patent: 4423136 (1983-12-01), Crivello et al.

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