Methodology for achieving dual gate oxide thicknesses

Details Methodology for achieving dual gate oxide thicknesses Methodology for achieving dual gate oxide thicknesses

1997-12-18

2000-06-27

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438197, 438766, 438775, H01L 2131, H01L 21469

Patent

active

060806826

ABSTRACT:
Dual gate oxide layer thicknesses are achieved by depositing a thin blocking layer on active regions of a semiconductor substrate, such as silicon nitride, oxynitride, or oxide. Selected active regions are nitridated through a patterned photoresist mask formed thereon. The blocking layer protects the substrate from the photoresist mask and enables nitriding, as by ion implantation, plasma exposure, or rapid thermal annealing.

REFERENCES:
patent: 4849376 (1989-07-01), Balzan et al.
patent: 5057449 (1991-10-01), Lowrey et al.
patent: 5330920 (1994-07-01), Soleimani
patent: 5780346 (1998-07-01), Arghanvani et al.
patent: 5882993 (1999-03-01), Gardner et al.
patent: 5918133 (1999-06-01), Garder et al.
patent: 5960319 (1999-09-01), Iwata et al.
Wolf et al. "Silicon Processing for the VLSI Era vol. 1--Process Technology," Lattice Press. Sunset Beach, CA (1986) p. 532-534.

Affiliated with

Also associated with

Rating

Methodology for achieving dual gate oxide thicknesses does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methodology for achieving dual gate oxide thicknesses, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methodology for achieving dual gate oxide thicknesses will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1784636