Method of treating CVD titanium nitride with silicon ions

Details Method of treating CVD titanium nitride with silicon ions Method of treating CVD titanium nitride with silicon ions

1998-11-12

2000-06-27

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438658, H01L 2144

Patent

active

060806672

ABSTRACT:
A titanium nitride film is formed on a silicon substrate having a contact hole formed therein by chemical vapor deposition and silicon ions are injected. Therefore, it is possible to reduce the film stress of the titanium nitride film, caused by the chemical vapor deposition, to the semiconductor device.

REFERENCES:
patent: 5885896 (1999-03-01), Thakur et al.
patent: 5940726 (1999-08-01), Yu
patent: 5960319 (1999-09-01), Iwata et al.

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