Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-07-16
2000-06-27
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438629, 438643, 438653, 438688, H01L 2128
Patent
active
060806575
ABSTRACT:
A method of aluminum metallization in the manufacture of an integrated circuit device is described. An insulating layer is provided over the surface of a semiconductor substrate wherein a metal plug fills an opening through the insulating layer to the semiconductor substrate. A titanium layer is deposited over the surface of the insulating layer and the metal plug using ionized metal plasma. A titanium nitride is deposited layer overlying the titanium layer. Vacuum is broken and the titanium nitride layer is exposed to the ambient air whereby a titanium oxynitride layer forms on the surface of titanium nitride layer. An aluminum layer is sputter deposited over the titanium oxynitride layer at a high temperature of greater than about 400 .degree. C. and low power of less than or equal to 4 kilowatts. The aluminum layer will be deposited in a (111)-orientation. The metal stack is patterned to form a metal line. Hillocks and metal voids are prevented by the process of the invention.
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Liu Chung-Shi
Shue Shau-Lin
Yu Chen-Hua
Ackerman Stephen B.
Pike Rosemary L.S.
Quach T. N.
Saile George O.
Taiwan Semiconductor Manufacturing Company
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