Method for making an electrical contact to a node location and p

Details Method for making an electrical contact to a node location and p Method for making an electrical contact to a node location and p

1999-02-25

2000-06-27

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438623, 438624, 438626, 438675, H01L 214763

Patent

active

060806532

ABSTRACT:
An electrical contact and method for making an electrical contact to a node location is disclosed and which includes forming a substrate having a node location to which electrical connection is to be made; forming a first patterned layer of a photosensitive material over the node location; forming a first dielectric layer over the first patterned layer of photosensitive material; planarizing the first dielectric layer to expose at least a portion of the first patterned layer of photosensitive material; forming a second patterned layer of a photosensitive material over the exposed first patterned layer of photosensitive material and the first dielectric layer; forming a second dielectric layer over the second patterned layer of photosensitive material; planarizing the second dielectric layer to expose at least a portion of the second patterned layer of photosensitive material; after planarizing the second dielectric layer, removing the first and second patterned layers of photosensitive material, the removal of the first and second layers of photosensitive material forming a void to the underlying node locations; and filling the void with electrically conductive material to make electrical contact to the node location.

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