Method of manufacturing capacitive element with a non-doped semi

Details Method of manufacturing capacitive element with a non-doped semi Method of manufacturing capacitive element with a non-doped semi

1996-10-17

2000-06-27

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438397, H01L 218242

Patent

active

060806230

ABSTRACT:
One electrode of a capacitive element is formed by a doped semiconductor film and a non-doped semiconductor film which covers at least part of the doped semiconductor film, and a capacitive dielectric film is formed to cover these semiconductor films. In forming this capacitive dielectric film, enhanced oxidation due to impurities is suppressed, so hardly any native oxide is formed on the surface of one electrode, and a reliable capacitive element having a large capacitance can be manufactured.

REFERENCES:
patent: 5141892 (1992-08-01), Beinglass
patent: 5286668 (1994-02-01), Chou
patent: 5436187 (1995-07-01), Tanigawa
patent: 5518946 (1996-05-01), Kuroda
patent: 5578516 (1996-11-01), Chou
patent: 5597754 (1997-01-01), Lou et al.
patent: 5726085 (1998-03-01), Crenshaw et al.
H. Watanabe et al., "A new cylindrical capacitor using hemispherical grained Si (HSG-Si) for 256Mb DRAMs," 1992 IEEE IEDM, pp. 259-262.

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