Semiconductor trench capacitor cell having a buried strap

Details Semiconductor trench capacitor cell having a buried strap Semiconductor trench capacitor cell having a buried strap

1995-08-31

1998-02-17

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438386, H01L 218242

Patent

active

057190801

ABSTRACT:
A semiconductor trench capacitor structure having a first level aligned isolation structure and buried strap that extends from within the trench into the doped semiconductor substrate. The semiconductor trench capacitor structure may be fabricated by forming a shallow trench within the trench capacitor and semiconductor substrate, depositing a layer of conductive material within the shallow trench, using a mask to define and recess the strap and depositing insulating material within the shallow trench.

REFERENCES:
patent: 4965217 (1990-10-01), Desilets et al.
patent: 5384277 (1995-01-01), Hsu et al.
patent: 5389559 (1995-02-01), Hsieh et al.
patent: 5545583 (1996-08-01), Lam et al.

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