Method for making a thin film transistor panel used in a liquid

Details Method for making a thin film transistor panel used in a liquid Method for making a thin film transistor panel used in a liquid

1996-02-12

1998-02-17

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438160, 438609, 257 59, 257 60, H01L 2184

Patent

active

057190780

ABSTRACT:
A method for making a completely self-aligned thin film transistor panel of a liquid crystal display includes the steps of: forming a gate electrode on a transparent substrate; depositing sequentially a first insulating layer, a semiconductor protecting layer aligned with the gate electrode by patterning the second insulating layer; implanting ions into the semiconductor layer; depositing a conductive layer; patterning the conductive layer together with the semiconductor layer; forming a passivation layer including both a first opening and a second opening, forming a pixel electrode connected to the conductive layer through the second opening; etching the conductive layer by using both the pixel electrode and the passivation layer as a mask to form a source electrode and a drain electrode. The conductive layer and semiconductor layer are patterned in a single process step in the present invention, while the conductive layer and semiconductor layer are separately patterned in the conventional method. Accordingly, the number of the masks is reduced, thereby reducing the cost of production and embodying a completely self-aligned TFT.

REFERENCES:
patent: 4685195 (1987-08-01), Szydlo et al.
patent: 5091337 (1992-02-01), Watanabe et al.
patent: 5229644 (1993-07-01), Wakai et al.
patent: 5371025 (1994-12-01), Sung
patent: 5478766 (1995-12-01), Park et al.
patent: 5614728 (1997-03-01), Akiyama

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