Process of plasma etching silicon

Details Process of plasma etching silicon Process of plasma etching silicon

1994-06-03

1996-07-16

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566461, 15665911, 1566621, H01L 213065

Patent

active

055363644

ABSTRACT:
A plasma etching process for forming a recess or opening on a silicon substrate by generating plasma between a pair of electrodes in an anode-coupled planar-type plasma etching apparatus and etching the silicon substrate located on one of the electrodes with the plasma, an improvement residing in that an etchant is a mixed gas of sulfur hexafluoride and oxygen and an etching mask covering the substrate, except for a portion where the recess or opening is to be formed, is made of chromium or a chromium compound. Preferably the distance between the electrodes is 10 to 30 mm, the volume ratio of sulfur hexafluoride to oxygen is 90:10 to 60:40, the pressure of the etchant gas is 0.15 to 0.4 Torr (20 to 53 Pa), and the temperature of the substrate is not less than 40.degree. C.

REFERENCES:
patent: 4380489 (1983-04-01), Beinvogl et al.
patent: 4595453 (1986-06-01), Yamazaki et al.
patent: 4741799 (1988-05-01), Chen et al.
patent: 4886569 (1989-12-01), Ojha et al.
patent: 5094712 (1992-03-01), Becker et al.

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