Method for fabricating a semiconductor memory device

Details Method for fabricating a semiconductor memory device Method for fabricating a semiconductor memory device

1994-02-02

1994-11-08

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437919, H01L 2170

Patent

active

053626648

ABSTRACT:
This invention relates to a method for fabricating a semiconductor memory device with a large capacitance, which comprises the steps of forming a gate insulating film, a gate electrode and a source and drain region on a semiconductor substrate, forming an interlayer and an etch stopper on the whole surface, etching selectively away the etch stopper and the interlayer to form an opening, forming a first conductive layer, a first insulating film and a second insulating film on the whole surface, etching selectively away the first and second insulating film, forming a side wall spacer of a third insulating film on the side of the first and second insulating film, forming a fourth insulating film on the whole surface, etching selectively away the fourth insulating film, removing the second insulating film and the side wall spacer, forming a second conductive layer on the whole surface, etching selectively away the second conductive layer and the first insulating film and the first conductive layer, removing the fourth insulating film and the first insulating film.

REFERENCES:
patent: 4742018 (1988-05-01), Kimura et al.
patent: 5053351 (1991-10-01), Fazan et al.
patent: 5071781 (1991-12-01), Seo et al.
patent: 5102820 (1992-04-01), Chiba
patent: 5164337 (1992-11-01), Ogasawa et al.
patent: 5223448 (1993-06-01), Su

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