Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Patent
1996-09-27
1998-12-08
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
438769, 438774, H01L 21316
Patent
active
058468889
ABSTRACT:
A desirable impurity, such as reactive gases and inert gases, is safely introduced into a substrate/oxide interface during high pressure thermal oxidation. Desirable impurities include chlorine, fluorine, bromine, iodine, astatine, nitrogen, nitrogen trifluoride, and ammonia. In one embodiment, the desirable impurity is introduced into a processing chamber prior to the high pressure oxidation step. Then, the temperature is brought to or maintained at an oxidation temperature. In another embodiment, the desirable impurity is introduced into the processing chamber after the high pressure oxidation step, while the temperature is still sufficiently high for oxidation. In yet another embodiment, the desirable impurity is introduced into the processing chamber both before and after the high pressure oxidation step.
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Chapek David L.
Thakur Randhir P. S.
Bowers Jr. Charles L.
Micro)n Technology, Inc.
Whipple Matthew
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