Process for removing titanium nitride layer in an integrated cir

Details Process for removing titanium nitride layer in an integrated cir Process for removing titanium nitride layer in an integrated cir

1996-05-16

1998-12-08

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438720, 438738, 438648, 438637, H01L 2144

Patent

active

058468803

ABSTRACT:
A process has been developed for removing an anti-reflective coating of titanium nitride from the surface of an aluminum layer that has been covered by a dielectric layer. Previously, this was achieved by coating said titanium nitride layer (together with the aluminum layer) with the dielectric layer and then using a single etching process to form both via holes through the dielectric and to remove the titanium nitride. When this process is used, etching proceeds reasonably quickly through the dielectric layer but becomes extremely slow once the titanium nitride is reached. In the process of the present invention, the titanium nitride layer is rapidly removed (prior to application of the dielectric layer) using a more powerful etchant. The titanium nitride/titanium layer that underlies the aluminum layer is protected during this rapid etching phase by means of a layer of a spin-on glass.

REFERENCES:
patent: 4605470 (1986-08-01), Gwozdz et al.
patent: 4820611 (1989-04-01), Arnold, III et al.
patent: 4824521 (1989-04-01), Kulkarni et al.
patent: 4839311 (1989-06-01), Riley et al.
patent: 4946550 (1990-08-01), Van Laarhoven
patent: 4946804 (1990-08-01), Pritchard et al.
patent: 4948459 (1990-08-01), Van Laarhoven et al.
patent: 5086017 (1992-02-01), Lu
patent: 5627345 (1997-05-01), Yamamoto et al.
Haim Gilboa, et al. "Sequential Sputter Deposition of Titanium Nitride and Aluminum" Proc. Seventh International IEEE VLSI Multilevel Int. Conf. (Jun. 1990).

Affiliated with

Also associated with

Rating

Process for removing titanium nitride layer in an integrated cir does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for removing titanium nitride layer in an integrated cir, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for removing titanium nitride layer in an integrated cir will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-176906