Method of fabricating a high density mask ROM with recess channe

Details Method of fabricating a high density mask ROM with recess channe Method of fabricating a high density mask ROM with recess channe

1996-09-06

1998-12-08

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438524, H01L 218246

Patent

active

058468641

ABSTRACT:
A high density mask ROM with recess channels is fabricated on a substrate by forming the bit lines through a number of field oxide layers having a bird's beak structure. In particular, every adjacent two bird's beaks of the field oxide layer are closely disposed or connected. The field oxide layers are used as masks for implanting ions to form the bit lines. Word lines are then formed over the substrate. The bird's beak mask results in the word lines having a wave shape. The resulting construction also has recessed channels between adjacent bit lines.

REFERENCES:
patent: 5108937 (1992-04-01), Tsai et al.
patent: 5466624 (1995-11-01), Ong et al.
patent: 5510288 (1996-04-01), Hong
patent: 5536670 (1996-07-01), Hsue

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