Semiconductor device having a vertical active region and method

Details Semiconductor device having a vertical active region and method Semiconductor device having a vertical active region and method

1997-05-20

1998-12-08

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438412, 438430, H01L 2910, H01L 21265, H01L 2978

Patent

active

058468625

ABSTRACT:
A semiconductor device and method of manufacture thereof is provided. According to one embodiment, a semiconductor device is formed by forming a trench within a substrate. An oxide layer is formed within the trench and portions of the oxide layer are removed to expose one or more portions of the substrate within the trench. A plurality of doped polysilicon pillars are formed within the trench. The doped polysilicon pillars include one or more active region pillars formed on the one or more exposed portions of the substrate.

REFERENCES:
patent: 5352915 (1994-10-01), Hutchings et al.
patent: 5457070 (1995-10-01), Hirade
patent: 5512517 (1996-04-01), Bryant
patent: 5563080 (1996-10-01), Ahn

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