Process for etching copper containing metallic film and for form

Details Process for etching copper containing metallic film and for form Process for etching copper containing metallic film and for form

1995-07-25

1997-01-07

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566461, 216 47, 216105, H01L 21306

Patent

active

055913024

ABSTRACT:
A process for dry etching a copper containing film formed on a substrate is performed by using an etching gas while heating at a temperature below 200.degree. C. The etching gas is selectable from the group consisting of a mixed gas of a N containing gas, an O containing gas, a N and O containing gas, or a mixed gas of a N containing gas, an O containing gas and a F containing gas, or a mixed gas of a N and O containing gas and a F containing gas. By this etching gas, Cu(NO.sub.3).sub.2 is formed to be sublimed.

REFERENCES:
patent: 4451327 (1984-05-01), Nelson
patent: 4466859 (1984-08-01), Nelson
patent: 4468284 (1984-08-01), Nelson
patent: 4615782 (1986-10-01), Namatsu et al.
patent: 5091050 (1992-02-01), Fujino et al.
patent: 5160404 (1992-11-01), Motoyama
patent: 5200032 (1993-04-01), Shinohara
patent: 5211804 (1993-05-01), Kobayashi

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