Method for producing a resist structure

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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430313, 430323, 430328, 430330, G03F 736

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052292584

ABSTRACT:
High resolution resist structures with steep edges are obtained using standard equipment, even in cases involving critical contact-hole planes. First, a photoresist layer containing a polymer with chemically reactive groups and a photoactive component based on diazoketone or quinone diazide is deposited on a substrate. The photoresist layer is then irradiated with a patterned image and treated with a polyfunctional organic compound having functional groups that can chemically react with the reactive groups of the polymer. This step is followed by a maskless flood exposure. The photoresist layer irradiated in this manner is then treated with a metal-containing organic compound having at least one functional group capable of chemical reaction with the reactive groups of the polymer, followed by etching in an oxygen-containing plasma.

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patent: 4613398 (1986-09-01), Chiong et al.
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patent: 4810601 (1989-03-01), Allen et al.
patent: 4908298 (1990-03-01), Hefferson et al.
patent: 5053314 (1991-10-01), Yanaoka et al.
SPIE vol. 1086: Advances in Resist Technology and Processing VI (1989), pp. 220-228.
J. Vac. Sci. Technol. B, vol. 7 (1989), pp. 1782-1786, American Vacuum Society.

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