Stacked-trench dram cell that eliminates the problem of phosphor

Details Stacked-trench dram cell that eliminates the problem of phosphor Stacked-trench dram cell that eliminates the problem of phosphor

1992-02-03

1993-06-29

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257303, 257304, 257311, H01L 2968, H01L 2978, H01L 2992

Patent

active

052237303

ABSTRACT:
This invention eliminates the problem of phosphorus diffusion from the storage-node capacitor plate of a stacked-trench DRAM cell into the access transistor channel region of that cell by lining the trench sidewalls with a dielectric lining and making electrical contact to the access transistor through the bottom of the trench, which, like the sidewalls thereof, is doped with a slow-diffusing N-type impurity. The phosphorus in the storage-node capacitor plate is thus distanced from the access transistor channel so that diffusivity ceases to affect access transistor performance characteristics.

REFERENCES:
patent: 4845539 (1989-07-01), Inoue
patent: 5010379 (1991-04-01), Ishii

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