Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1997-05-01

1999-05-18

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723R, 156345, C23C16/00

Patent

active

059047801

ABSTRACT:
In a plasma etching apparatus, an inactive gas and a reactive gas are supplied from gas spouting holes into a process chamber, and are turned into plasma by means of RF discharge, so that a semiconductor wafer placed on a susceptor is etched by the plasma. An antenna formed of a solenoidal coil is arranged around the side wall of the process chamber, so as to generate an RF inductive electric field in the process chamber. A plurality of barriers are arranged to extend into the skin-depth region of the plasma from the side wall of the process chamber, so as to limit a mean free path of electrons in the skin-depth region. The barriers decrease density of low energy electrons in the skin depth region, so as to suppress progress of dissociation of the reactive gas, thereby obtaining a predetermined etching selectivity.

REFERENCES:
patent: 5061838 (1991-10-01), Lane et al.
patent: 5113790 (1992-05-01), Geisler et al.
patent: 5527394 (1996-06-01), Heinrich et al.
patent: 5556501 (1996-09-01), Collins et al.
patent: 5591493 (1997-01-01), Paranjpe et al.
patent: 5683548 (1997-11-01), Hartig et al.

Affiliated with

Also associated with

Rating

Plasma processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1757553