Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-12-16
1999-05-18
Chang, Joni
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
H01L21/8242
Patent
active
059045221
ABSTRACT:
A method of fabricating a semiconductor memory device including a substrate with a transfer transistor formed thereon. A first insulating layer is formed on the substrate, covering the transfer transistor. A first conductive layer is formed, penetrating at least the first insulating layer and electrically coupling to a source/drain region of the transfer transistor. A second insulating layer and a stack layer are formed, and a third insulating layer is formed on the sidewalls of the stack layer. A fourth insulating layer is formed and an opening is made to expose a portion of the first conductive layer. A second conductive layer is formed over the stack layer and second insulating layer and filling the opening. The second conductive layer is defined and the stack layer and the second insulating layer below the stack layer are removed. The first and the second conductive layers are defined to form a storage electrode of the charge storage capacitor. The second insulating layer is removed and a dielectric layer is formed over the exposed surfaces of the first and second conductive layers. A third conductive layer is formed over the surface of the dielectric layer, serving as an opposing electrode of the charge storage capacitor.
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Chang Joni
United Microelectronics Corp.
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