Method for fabricating an oxynitride layer having anti-reflectiv

Details Method for fabricating an oxynitride layer having anti-reflectiv Method for fabricating an oxynitride layer having anti-reflectiv

1999-02-23

2000-11-28

Fourson, George

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

H01L 21316

Patent

active

061535419

ABSTRACT:
A method for fabricating an anti-reflective coating (ARC) with a leakage current of less than 1.0 pA/cm.sup.2 at a voltage of about 10 V. The ARC is formed by depositing a silicon oxynitride film over a semiconductor substrate using a plasma enhanced chemical vapor deposition process. To obtain a silicon oxynitride layer having n and k values appropriate for use as an Anti-Reflection Coating (ARC) and having leakage current appropriate for use as an etch-stop or CMP-stop and dielectric layer in a subsequently formed device, it is crucial to have a SiH.sub.4 to N.sub.2 O ratio less than 2.5 and an RF power greater than 120 W.

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