Metallized interconnection structure and method of making the sa

Details Metallized interconnection structure and method of making the sa Metallized interconnection structure and method of making the sa

1998-06-04

2000-11-28

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438623, 438624, 438637, 438653, H01L 2144

Patent

active

061535214

ABSTRACT:
A dual damascene method of fabricating an interconnection level of conductive lines and connecting vias etches a via opening in a first insulating layer. A photoresist layer that the defines the conductive wiring is deposited and patterned on the first insulating layer after the via opening has been created. The via opening and the conductive wire opening in the resist layer are then filled with the conductive material, such as copper. The resist layer may then be removed and a second insulating layer provided over the first insulating layer.

REFERENCES:
patent: 5151168 (1992-09-01), Gilton et al.
patent: 5256274 (1993-10-01), Prois
patent: 5266446 (1993-11-01), Chang et al.
patent: 5300813 (1994-04-01), Joshi et al.
patent: 5334488 (1994-08-01), Shipley, Jr.
patent: 5482894 (1996-01-01), Havemann
patent: 5550405 (1996-08-01), Cheung et al.
patent: 5635423 (1997-06-01), Huang et al.
patent: 5705430 (1998-01-01), Avanzino et al.
patent: 5821620 (1998-10-01), Hong
patent: 5830563 (1998-11-01), Shimoto et al.
Toepper et al. "Low Cost Additive Electroless Copper Metallization on BCB for MCm-D", Micro System Technologies, pp. 199-203, Sep. 1996.
T. Miyagi et al. "MCM-D/L Using Copper/Photosensitive BCB Multilayer for Upper Microwave Band Systems", IEEE, pp. 149-153, May 1996.
Pai et al. "Selective Electrolee Copper for VLSI Interconnection", IEEE, pp. 423-425, Sep. 1989.
Shimoto et al. "Cu/Photosensitive-BCB Thin Film Multilayer Technology for High-Performance Multichip Module", MCM, pp. 115-120, 1994.

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