Method of using a silicon oxynitride ARC for final metal layer

Details Method of using a silicon oxynitride ARC for final metal layer Method of using a silicon oxynitride ARC for final metal layer

1999-08-16

2000-11-28

Fourson, George

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438952, H01L 2128

Patent

active

061535044

ABSTRACT:
A SiON ARC is formed on the uppermost metal or bonding pad layer, a topside protective layer, e.g., oxide, nitride or oxynitride, formed thereon and etching is conducted through the topside protective layer and SiON ARC to form a bonding pad opening. The use of SiON as an ARC reduces bonding pad etching time, enables a reduction in the height of the metal stack for reduced capacitance between metal lines and increased circuit speed, and improves etch marginality due to the reduced aspect ratio.

REFERENCES:
patent: 5707487 (1998-01-01), Hori et al.
patent: 5837576 (1998-11-01), Chen et al.
patent: 5918147 (1999-06-01), Filipiak et al.
patent: 5976973 (1999-11-01), Ohira et al.
"Formation Mechanism of Ring Defects During Metal Rie", by Colgan et al., 1994 VMIC Conference, Jun. 7-8; pp. 284-286.

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