Method of manufacturing semiconductor devices having improved po

Details Method of manufacturing semiconductor devices having improved po Method of manufacturing semiconductor devices having improved po

1997-01-07

2000-11-28

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438592, 20419217, H01L 218238

Patent

active

061534528

ABSTRACT:
Methods of manufacturing a semiconductor device. One method includes the steps of: (1) providing a substrate over which is to be deposited a metal silicide layer having a stoichiometric ratio within a desired range, (2) providing a target composed of a metal silicide, the target subject to degradation by reason of use, (3) sputtering atoms from the target to form the metal silicide layer over the substrate, the stoichiometric ratio subject to being without the desired range by reason of the degradation of the target and (4) depositing a predetermined amount of silicon on the metal silicide layer to return the stoichiometric ratio to within the desired range, a useful life of the target thereby increased.

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