Semiconductor device with salicide structure and fabrication met

Details Semiconductor device with salicide structure and fabrication met Semiconductor device with salicide structure and fabrication met

1998-12-07

2000-03-14

Wilczewski, Mary

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257382, 257384, 438201, 438211, 438275, 438655, 438682, 438257, H01L 218239, H01L 27105

Patent

active

060376252

ABSTRACT:
A semiconductor device is provided, which makes it possible to decrease the electric sheet resistance of source/drain regions of MOSFETs in a peripheral circuitry without degradation of the data writing speed in nonvolatile memory cells. This device is comprised of nonvolatile memory cells and a peripheral circuitry provided on a same semiconductor substrate. The nonvolatile memory cells are formed by a first plurality of MOSFETs of a first conductivity type. The peripheral circuitry includes a second plurality of MOSFETs of the first conductivity type. Each of the first plurality of MOSFETs is equipped with a gate electrode having a floating gate for data storing and source/drain regions having substantially no silicide films. Each of the second plurality of MOSFETs is equipped with source/drain regions having silicide films and a doping concentration lower than that of the source/drain regions of each of the first plurality of MOSFETs. It is preferred that the doping concentration of the source/drain regions of the first plurality of MOSFETs is equal to 1.times.10.sup.19 atoms/cm.sup.3 or higher and the doping concentration of the source/drain regions of the second plurality of MOSFETs is lower than 1.times.10.sup.19 atoms/cm.sup.3.

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Y. Tang et al., "Different Dependence of Band-to-Band and Fowler-Nordheim Tunnelling on Source Doping Concentration of an n-MOSFET", pp. 525-527, IEEE Electron Device Letters, vol. 17, No. 11, Nov. 1996.
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