Coating apparatus – Gas or vapor deposition – With treating means
Patent
1987-07-10
1989-04-04
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
118715, 118724, C23C 1600
Patent
active
048175587
ABSTRACT:
A thin-film depositing apparatus which includes a reaction container adapted to receive a material gas therein, for a thin-film depositing reaction, a substrate supporting member located in a predetermined position in the reaction container in order to set a substrate on which a thin film is to be deposited, heating mechanism for heating the substrate supporting member to deposit the thin film, while heating the substrate, and a cover member covering, in a contacting or noncontacting manner, the whole surface of the substrate supporting member except a substrate bearing surface on which the substrate is to be set. The surface temperature of the cover member is kept lower than that of the substrate, so that an undesired film is restrained from being deposited on the surface of the cover member. Thus, a thin film of good quality can be deposited on the substrate surface with high efficiency.
REFERENCES:
patent: 3845738 (1974-11-01), Berkman
patent: 4503807 (1985-03-01), Nakayama
"Kinetics and Mechanism of Selective Tungsten Deposition by LPCVD," Y. Pauleau and Ph. Lami, J. Electrochem, Soc., 132, 2779, (1985).
Bueker Richard
Kabushiki Kaisha Toshiba
LandOfFree
Thin-film depositing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin-film depositing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin-film depositing apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-171771