Method of producing MOSFET transistors by means of tilted implan

Details Method of producing MOSFET transistors by means of tilted implan Method of producing MOSFET transistors by means of tilted implan

1998-04-20

1999-06-22

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438525, 438307, H01L 21336, H01L 213205

Patent

active

059151854

ABSTRACT:
The method includes the following steps: delimiting active areas on a substrate, forming gate electrodes insulated from the substrate on the active areas, and subjecting the front surface of the substrate to several implantation steps with doping ion beams to form source and drain regions with the use of the gate electrodes as masks. The direction of the implantation beam is defined by an angle of inclination to the front surface and by an orientation to a reference line on the front surface. To avoid performing numerous implantation steps without foregoing channels of uniform and constant length, the widths of the gate electrode strips are determined at the design stage in relation to the orientation of the strips to the reference line and on the orientation of the directions of the implant beams.

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