Non-volatile semiconductor memory device having oxynitride film

Details Non-volatile semiconductor memory device having oxynitride film Non-volatile semiconductor memory device having oxynitride film

1993-08-05

1994-04-26

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257634, 257639, 257640, 257641, 257644, 257649, 257650, H01L 2968, H01L 2978, H01L 2934

Patent

active

053069366

ABSTRACT:
An electrically programmable read only memory device store data bits in the form of electric charges accumulated in floating gate electrodes of the memory cells, and a spin-on glass film is incorporated in an inter-level insulating film structure over the memory cells so as to create a smooth surface for wirings, wherein a silicon oxynitride film is inserted between the floating gate electrodes and the spin-on-glass film for preventing the accumulated electric charges from undesirable ion-containing water diffused from the spin-on-glass film.

REFERENCES:
patent: 5040036 (1991-08-01), Hazani
patent: 5057886 (1991-10-01), Riemenschneider et al.
A Submicron CMOS Two Level Metal Process with Planarization Techniques, U. Fritsch et al, Microelectronic Technology Center, Otto-Hahn-Ring 6, 8000 Munchen 83, West Germany, June. 13-14, 1988, pp. 69-75.

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory device having oxynitride film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory device having oxynitride film , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device having oxynitride film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1713686