Nonvolatile memory circuit

Details Nonvolatile memory circuit Nonvolatile memory circuit

1992-08-28

1993-12-14

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Precharge

365205, 365210, G11C 700, G11C 1300

Patent

active

052709787

ABSTRACT:
The present invention relates to a precharge/discharge nonvolatile memory circuit for detecting signals output from two bit lines on read-cell and dummy cell sides using a flip-flop circuit, comprising a first row decoder on the read-cell side, a second row decoder on the dummy-cell side, a first column decoder on the read-cell side, a second column decoder on the dummy-cell side, a read cell selected by the first row decoder and the first column decoder, a dummy cell selected by the second row decoder and the second column decoder, first and second precharge transistors for performing a precharge operation, first and second discharge transistors for performing a discharge operation, the flip-flop circuit, a discharge control circuit for generating a discharge signal, and a precharge control circuit for generating a precharge signal after the discharge signal is generated from the discharge control circuit.

REFERENCES:
patent: 5001668 (1991-03-01), Ito et al.
patent: 5058062 (1991-10-01), Wada et al.
patent: 5138579 (1992-08-01), Tatsumi et al.
U.S. Patent Application 07/630,842 filed Dec. 20, 1990.

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