Semiconductor device having MOS transistor and method of manufac

Details Semiconductor device having MOS transistor and method of manufac Semiconductor device having MOS transistor and method of manufac

1998-01-26

1999-06-08

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438219, 438231, 438525, M01L 21336, M01L 218249

Patent

active

059111038

ABSTRACT:
An MOS transistor capable of improving hot carrier resistance and a method of manufacturing thereof are provided. In the MOS transistor, nitrogen is introduced in a sidewall oxide film, so that a concentration distribution of nitrogen in a section perpendicular to the main surface of a semiconductor substrate in the sidewall oxide film has a peak at the interface between the semiconductor substrate and the sidewall oxide film. As a result, an interface state at the interface between the sidewall oxide film and the main surface of the semiconductor substrate is suppressed, resulting in decrease of the probability at which hot carriers are trapped in the interface state. Accordingly, the hot carrier resistance is improved.

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"A New Drain Engineering Structure-SCD-LDD (Surface Counter doped LDD) for Improved Hot Carrier Reliability", Jih Wen Chou et al., Jpn. J. Appl. Phys., vol. 32 (1993(, pp. L1203-L1205, Part 2, No. 9A, Sep. 1, 1993.

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