Method for growing dual oxide thickness using nitrided oxides fo

Details Method for growing dual oxide thickness using nitrided oxides fo Method for growing dual oxide thickness using nitrided oxides fo

1997-05-02

2000-03-14

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438264, 438769, H01L 218247

Patent

active

060372249

ABSTRACT:
A method for growing dual thickness oxide includes the step of forming a first oxide having a first thickness. A thin layer of the first oxide is transformed into an oxygen diffusion barrier, wherein the oxygen diffusion barrier interfaces at the silicon substrate. A portion of the oxide and oxygen diffusion barrier is removed to expose an area on the silicon substrates. Thereafter, a second oxide is formed on the exposed area of the silicon substrate surface wherein the second silicon dioxide has a second thickness different from the first thickness.

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