Method of fabricating a capacitor

Details Method of fabricating a capacitor Method of fabricating a capacitor

1998-07-09

2000-03-14

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, H01L 218242

Patent

active

060372141

ABSTRACT:
A method for fabricating a capacitor of a memory cell in a dynamic random access memory, including forming a branch-like lower electrode, a dielectric film, and a upper electrode. The lower electrode consists of a cylindrical structure and horizontally extended outward conducting branches. This branch-like lower electrode efficiently increases the permittivity of the capacitor by increasing the surface of the electrode.

REFERENCES:
patent: 5444005 (1995-08-01), Kim et al.
patent: 5663085 (1997-09-01), Tanigawa

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