Method of chemical mechanical polishing predominantly copper con

Details Method of chemical mechanical polishing predominantly copper con Method of chemical mechanical polishing predominantly copper con

1992-06-04

1993-07-06

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156666, 51165R, 437225, 437228, H01L 2100

Patent

active

052250342

ABSTRACT:
A semiconductor processing method of chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate includes, a) providing a chemical mechanical polishing slurry comprising H.sub.2 O, a solid abrasive material, and a third component selected from the group consisting of HNO.sub.3, H.sub.2 SO.sub.4, and AgNO.sub.3 or mixtures thereof; and b) chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate with the slurry. Such slurry also constitutes part of the invention. Such slurry may also contain an additional oxidant selected from the group consisting of H.sub.2 O.sub.2, HOCl, KOCl, KMgO.sub.4 and CH.sub.3 COOH or mixtures thereof to form a copper oxide passivating-type layer at the copper surface.

REFERENCES:
patent: 3948703 (1976-04-01), Kushibe
patent: 4305779 (1981-12-01), Steeves et al.
patent: 4395302 (1983-07-01), Courduvelis
patent: 4632727 (1986-12-01), Nelson
patent: 4944836 (1990-07-01), Beyer et al.
patent: 4956313 (1990-09-01), Cote et al.
patent: 5084071 (1992-01-01), Nenadic et al.
Surface Tech Review, Rodel, vol. 1, Issue 5, Oct. 1988, pp. 1-4.

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