Semiconductor device having a conductor pattern side face provid

Details Semiconductor device having a conductor pattern side face provid Semiconductor device having a conductor pattern side face provid

1998-04-16

2000-02-08

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

306298, 306300, 306301, 306307, 306317, 306774, H01L 27108, H01L 2976, H01L 2994

Patent

active

060230835

ABSTRACT:
A semiconductor device has a conductive contact buried in a contact hole formed in an insulation film. A conductor pattern is formed on the insulation film and a separate conductive sidewall is formed on a side face of the conductor pattern over or next to the contact buried in the contact hole. The separate conductive sidewall extends on the side face above a top face of the insulation film in a direction away from the top face of the insulation film. This permits the conductor pattern to either be directly in contact with the conductive contact in the contact hole and/or to make good electrical contact with the contact in the contact hole via the separate conductive sidewall.

REFERENCES:
patent: 5852328 (1998-12-01), Nishimura et al.

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