Method of fabricating a metal-oxide-semiconductor transistor

Details Method of fabricating a metal-oxide-semiconductor transistor Method of fabricating a metal-oxide-semiconductor transistor

1998-07-30

2000-02-08

Nelms, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438527, H01L 21336, H01L 21425

Patent

active

060227850

ABSTRACT:
The invention discloses a method of forming a metal-oxide-semiconductor transistor. The method provides a substrate, where a gate structure is formed thereon. Next, a first spacer is formed on the sidewall of the gate structure. A pair of heavily doped regions is formed in the substrate. Then, an annealing process is performed to make the doped ions in the heavily doped regions uniformly distributed. Next, the first spacer is removed and a thin pad dielectric layer is formed over the substrate. Next, a first type halo structure is formed in the bottom portion of the source/drain region beneath the gate structure. A lightly doped region is formed between the gate structure and the first type halo structure and above the first type halo structure. An etching process is performed on the pad dielectric layer to form a second spacer and then the MOS transitor is completed.

REFERENCES:
patent: 5595919 (1997-01-01), Pan
patent: 5770508 (1998-06-01), Yeh et al.

Affiliated with

Also associated with

Rating

Method of fabricating a metal-oxide-semiconductor transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a metal-oxide-semiconductor transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a metal-oxide-semiconductor transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1680794