Method of making high performance MOSFET with integrated poly/me

Details Method of making high performance MOSFET with integrated poly/me Method of making high performance MOSFET with integrated poly/me

1998-06-10

1999-11-30

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438233, 438586, 438655, 257327, H01L 21336

Patent

active

059941936

ABSTRACT:
An integrated circuit transistor and method of making the same are provided. The transistor includes a substrate, first and second source/drain regions, and a gate electrode stack coupled to the substrate. The gate electrode stack is fabricated by forming a first insulating layer on the substrate, forming a first conductor layer on the first insulating layer, and forming a metal layer on the first conductor layer. A second insulating layer, such as an interlevel dielectric layer, is coupled to the substrate adjacent to the gate electrode stack. Sidewall spacers and LDD processing may be incorporated. The transistor and method integrate metal and polysilicon into a self-aligned gate electrode stack.

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Stanley Wolf and Richard N. Tauber, Silicon Processing for the VLSI Era, vol. 3-The Submicron MOSFET; p. 641; 1995.

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