Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-10-03
1999-11-30
Trinh, Michael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438152, 438155, 438455, 148DIG12, 148DIG126, H01L 21336
Patent
active
059941880
ABSTRACT:
A process for integrating a vertical power device, such as an IGBT device, with suitable control circuitry, such as circuitry that provides self-protection from over-temperature (OT), over-voltage (OV) and over-current (OC) conditions. The process yields a vertical power device that is monolithically integrated with, and dielectrically isolated from, its control circuitry with the use of wafer-bonded silicon-on-insulator (SOI) material that yields a buried oxide layer. The process includes simultaneous fabrication of the power device below the buried oxide layer and its control circuitry above the buried oxide layer, in the SOI layer.
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Delco Electronics Corporation
Funke Jimmy L.
Trinh Michael
LandOfFree
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