Ferroelectric memory and non-volatile memory cell for same

Details Ferroelectric memory and non-volatile memory cell for same Ferroelectric memory and non-volatile memory cell for same

1994-10-28

1996-07-30

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

257295, G11C 1122

Patent

active

055418708

ABSTRACT:
A non-volatile integrated circuit memory in which the memory cell includes a first transistor gate overlying a first channel region, a ferroelectric material overlying a second channel region, and a second transistor gate overlying a third channel region. The channel regions are connected in series, and preferably are contiguous portions of a single semiconducting channel. The firm channel is connected to a plate voltage that is 20% to 50% of the coercive voltage of the ferroelectric material. A sense amplifier is connected to the third channel region via a bit line. The rise of the bit line after reading a logic "1" state of the cell is prevented from disturbing the ferroelectric material by shutting off the third channel before the sense amplifier rises.

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