Method for dry etching

Details Method for dry etching Method for dry etching

1994-01-03

1994-10-11

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156657, 156662, 437228, H01L 21306, B44C 122, C03C 1500, C23F 100

Patent

active

053544188

ABSTRACT:
A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameter for controlling the first and second conditions are contemplated.

REFERENCES:
patent: 4579623 (1986-04-01), Suzuki et al.
patent: 5110408 (1992-05-01), Fujii et al.
patent: 5242539 (1993-09-01), Kumihashi et al.
K. Ono et al, "Plasma Chemical View of Magnetron and Reactive Ion Etching of Si with Cl", Japanese Journal of Applied Physics, vol. 29, No. 10, Oct. 1990, pp. 2229-2235.
C. Dominguez et al, "Analysis of the Low Pressure Gas Composition in the Etching Silicon ", Journal of the Electrochemical Society, vol. 134, No. 1, Jan. 1987, pp. 202-205.
M. Gross et al., "Modeling of Sloped Sidewalls Formed by Simultaneous Etching and Deposition", Journal of Vacuum Science & Technology: Part B, vol. 7, No. 3, May 1989, pp. 534-541.
Abstract Nos. 26p-ZF-1, 26p-ZF-9, 51st Japan Society of Applied Physics Autumn Meeting, 1990, pp. 462-463.
Arikado et al, "Al Tapered Etching Technology Using 10.sup.-3 Torr Magnetron Discharge Reactive Ion Etching," Proceedings of Symposium on Dry Process, 1986, pp. 48-52.
Kimura et al, "Local Etched Profile Anomaly in ECR Prasma Etching", The Electrochemical Society Spring Meeting, 1991, Extended Abstracts, 91-1, pp. 670-671.

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