Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-07-14
2000-11-07
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257310, 257382, 257383, 257411, 257412, 257413, 257761, H01L 2976
Patent
active
061440825
ABSTRACT:
A semiconductor device and a process for production thereof, said semiconductor device having a new electrode structure which has a low resistivity and withstands heat treatment at 400.degree. C. and above. Heat treatment at a high temperature (400-700.degree. C.) is possible because the wiring is made of Ta film or Ta-based film having high heat resistance. This heat treatment permits the gettering of metal element in crystalline silicon film. Since this heat treatment is lower than the temperature which the gate wiring (0.1-5 .mu.m wide) withstands and the gate wiring is protected with a protective film, the gate wiring retains its low resistance.
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Fujimoto Etsuko
Fukuchi Kunihiko
Isobe Atsuo
Takayama Toru
Yamazaki Shunpei
Hardy David
Ortiz Edgardo
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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