Method to improve adhesion between low dielectric constant layer

Details Method to improve adhesion between low dielectric constant layer Method to improve adhesion between low dielectric constant layer

1998-12-28

2000-11-07

Picardat, Kevin M.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438623, H01L 2131

Patent

active

061436704

ABSTRACT:
A method for forming upon a substrate employed within a microelectronics fabrication a composite dielectric layer with enhanced adhesion. There is first provided a substrate. There is then formed over and upon the substrate a first dielectric layer comprising a silicon, oxygen and nitrogen containing dielectric material in contact with a second dielectric layer comprising an organic polymer spin-on-polymer (SOP) dielectric material. The interface between the dielectric layers may be treated by ion implantation methods to provide the resulting silicon, oxygen and nitrogen containing dielectric layer composition to provide the composite dielectric layer with enhanced adhesion at the interface.

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