Method of manufacturing bottom electrode of a capacitor

Details Method of manufacturing bottom electrode of a capacitor Method of manufacturing bottom electrode of a capacitor

1999-04-05

2000-11-07

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, H01L 218242

Patent

active

061436038

ABSTRACT:
A method for manufacturing a dual-cylinder bottom electrode. Because the node contact hole is formed by self-aligned etching and the materials of the spacers are conductive materials, the node contact hole is smaller than the resolution of the photolithography. Hence, the size of the device can be greatly reduced. Furthermore, because of the dual-cylinder bottom electrode, the surface area of the bottom electrode is enlarged in a limited space. Therefore, the capacitance of the capacitor is increased.

REFERENCES:
patent: 5741722 (1998-04-01), Lee
patent: 5849617 (1998-12-01), Wu

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