Method of fabricating DRAM

Details Method of fabricating DRAM Method of fabricating DRAM

1998-12-09

2000-11-07

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 218242

Patent

active

061436011

ABSTRACT:
A method of fabricating DRAM and embedded DRAM. A contact pad is formed in the periphery/logic circuitry region simultaneously with the formation of the bit line in the memory region. A metal-insulator-metal (MIM) capacitor structure is formed in the memory region by damascene, and a contact and a contact pad are formed in the periphery/logic circuitry region. The formation of the contact in the periphery/logic circuitry is formed step by step to lower the difficulty to fabricate the deep contact. The capacitor electrodes are made by metal layers, which can increase the capacitance of the capacitor.

REFERENCES:
patent: 5610854 (1997-03-01), Ema

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