Mode-selectable voltage driving circuit for use in semiconductor

Electronic digital logic circuitry – Signal sensitivity or transmission integrity

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365229, 326 34, H03K 1716

Patent

active

056569467

ABSTRACT:
A voltage driving circuit for use in a semiconductor memory device. The voltage driving circuit includes a generator which generates a first voltage for an operating mode of the device, a generator which generates a second voltage for a standby mode, and a pair of switches connected between the voltage generators and an operating circuit, for selectively supplying the first and second voltages thereto. The first and second switches each have a control terminal, both of which are commonly coupled to a mode signal, for allowing external control of the voltage selection. The first and second voltages are preferably set relative to each other so as to reduce the subthreshold leakage current consumed by the semiconductor memory during a standby mode, while maintaining a desired operating speed during an operating mode.

REFERENCES:
patent: 4337524 (1982-06-01), Parkinson
patent: 4422163 (1983-12-01), Oldenkamp
patent: 5274828 (1993-12-01), McAdams
patent: 5278798 (1994-01-01), Miyawaki
patent: 5408144 (1995-04-01), Sakata et al.
patent: 5416747 (1995-05-01), Ohira
patent: 5541885 (1996-07-01), Takashima

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