Method of forming a multiple transistor channel doping using a d

Details Method of forming a multiple transistor channel doping using a d Method of forming a multiple transistor channel doping using a d

1997-01-30

1998-10-27

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438228, 438224, 438199, H01L 218238

Patent

active

058277633

ABSTRACT:
A method of forming a multiple transistor channel doping in a semiconductor substrate utilizes a unique photoresist sequence. A pattern of a first resist in first and second locations on first and second different areas of the semiconductor substrate is formed, respectively. A pattern of a second resist is then formed on the second area, wherein the second resist covers the first resist pattern in the second location. The first resist is selected for being immune from the second resist. Ions are then implanted in the first area to form a first conductivity type well having a first multiple transistor channel doping profile. The second resist pattern is then removed and a pattern of a third resist is formed on the first area, wherein the third resist covers the first resist pattern in the first location. In addition, the first resist is selected for being immune from the third resist. Lastly, ions are implanted in the second area to form a second conductivity type well having a second multiple transistor channel doping profile. A substrate having a multiple transistor channel doping profile is also disclosed.

REFERENCES:
patent: 4978626 (1990-12-01), Poon et al.
patent: 5132241 (1992-07-01), Su
patent: 5416038 (1995-05-01), Hsue et al.
patent: 5422301 (1995-06-01), Otsuki

Affiliated with

Also associated with

Rating

Method of forming a multiple transistor channel doping using a d does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a multiple transistor channel doping using a d, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a multiple transistor channel doping using a d will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1613434