Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-03-29
1997-12-09
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257344, 257345, H01L 2976, H01L 2954, H01L 31062, H01L 31113
Patent
active
056964013
ABSTRACT:
An MOSFET has the essential feature lying in that the depths of well regions are different between a channel region and a diffusion region under a gate electrode to suppress charges in depletion layers. The MOSFET comprises a first well region which is formed in the channel region of a substrate below a gate electrode, and has a PN junction shallower than the sum of the width of a channel depletion layer formed by a voltage applied to the gate electrode and the width of a depletion layer formed by a substrate voltage of the substrate, and a second well region which is formed in source and drain regions to extend to the first well region, and has a PN junction deeper than the sum of the width of a depletion layer formed in the source or drain region and the width of a depletion layer formed in the first well region by the substrate voltage of the substrate.
REFERENCES:
patent: 4729001 (1988-03-01), Haskell
Proceedings of the IEDM--International Electron Devices Meeting, "High Performance SOIMOSFET Using Ultra-Thin SQI Film", Makoto Yoshimi et al., pp. 640-643, Dec. 6-9, 1987.
Symp. VLSI Tech. Dig. "High Speed and Highly Reliable Trench MOSFET with Dual-Gate", T. Mizuno et al., pp. 23-24, 1988.
Tomohisa Mizuno et al., High Performance Shallow Junction Well Transistor (SJET) published in Symp. VLSI Tech. Dig. (1991) pp. 109-110.
Asao Yoshiaki
Mizuno Tomohisa
Kabushiki Kaisha Toshiba
Meier Stephen
LandOfFree
Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1610044