Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Utilizing reflow
Patent
1995-02-17
1997-08-12
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Utilizing reflow
427387, 4273762, 427226, 438780, H01L 21316
Patent
active
056565550
ABSTRACT:
A modified hydrogen silsesquioxane (HSQ) precursor is disclosed, along with methods for depositing such a precursor on a semiconductor substrate and a semiconductor device having a dielectric thin film deposited from such a precursor. The method comprises coating a semiconductor substrate 10, which typically comprises conductors 12, with a film of a modified HSQ film precursor. The HSQ film precursor comprises a hydrogen silsesquioxane resin and a modifying agent, preferably selected from the group consisting of alkyl alkoxysilanes, fluorinated alkyl alkoxysilanes, and combinations thereof. The method further comprises curing film 14, wherein the inclusion of the modifying agent inhibits oxidation and/or water absorption by the film during and/or after curing. It is believed that the modifying agent modifies film surface 16 to produce this effect. Films produced according to the present invention apparently have repeatable dielectric properties for drying and curing conditions which produced widely varying properties for unmodified films.
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Electronic Packaging Materials Science, Low Temperature Ceramic Coatings for Environmental Protection of Integrated Circuits, Grish Chandra, Mat. Res. Soc. Synp. Proc. vol. 203.
Bowers Jr. Charles L.
Donaldson Richard L.
Harris James E.
Stoltz Richard A.
Texas Instruments Incorporated
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