Nonvolatile semiconductor memory device capable of reliably writ

Details Nonvolatile semiconductor memory device capable of reliably writ Nonvolatile semiconductor memory device capable of reliably writ

1989-04-13

1990-08-28

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Precharge

365185, 36518905, 365233, G11C 700

Patent

active

049531298

ABSTRACT:
An electrically erasable programmable read only memory (EEPROM) latches externally applied write data in column latches, erases information of selected memory cells and then writes the latched write data into the selected memory cells. This EEPROM includes detectors for detecting a potential of the latch node of the corresponding latch, chargers each for charging the corresponding bit line in response to the output of the potential detector in a latched data write cycle, and separation transistors each for separating a bit line from the latch node of the corresponding column latch in response to the activation of the chargers.

REFERENCES:
patent: 4379345 (1983-04-01), Url
patent: 4435789 (1984-03-01), Giebel et al.
C. Cioaca et al., "A Million Cycle CMOS 256K EEPROM", pp. 78-79.
S. Mehrotra et al., "A 64 Kilobit CMOS EEROM with On-Chip ECC", pp. 142-143.
R. Jolly et al., "Two 35ns 64 K CMOS EEPROMs", pp. 172-173, 337-338, Feb. 1985.

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