Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-09-15
2000-05-02
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
118723R, H01L 2100
Patent
active
060572353
ABSTRACT:
A process of forming a layer of conductive material over a layer of insulating material is provided. A wafer is positioned on a wafer platform such that it is thermally and electrically coupled to the wafer platform. A clamping ring engages the peripheral edge of the wafer such that the wafer is held against the top surface of the wafer platform. The clamping ring is electrically coupled to the wafer pedestal. The wafer is exposed to a plasma comprising conductive material and an initial layer of conductive material is formed over the insulating layer until the top surface of the wafer is electrically coupled to the clamping ring. The wafer pedestal is then electrically biased and additional conductive material is formed. Once the initial layer of conductive material is electrically coupled to the clamping ring, the potential difference between the top and bottom surface of the wafer is zero such that arcing through the wafer is reduced. The wafer platform may also be exposed to the plasma so as to reduce the potential difference between the top and bottom surfaces of the wafer when the wafer platform is electrically biased.
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Burton Randle D.
Leiphart Shane P.
Bowers Charles
Micro)n Technology, Inc.
Sulsky Martin
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