Method of producing a transistor structure

Details Method of producing a transistor structure Method of producing a transistor structure

1998-02-18

2000-05-02

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438570, 438583, 438620, H01L 2128, H01L 21768

Patent

active

060572019

ABSTRACT:
The method produces transistor structures with a smaller contact opening, without having to take multiple adjustment allowances into account. Moreover, the method provides two zones of a second conductivity type, which have different dopant concentrations, so that a more gentle transition in the drain doping is obtained. The gentler transition in drain doping effects a lowering in the peak field intensity that can release hot electrons. Thus a degradation of the first insulating layer (gate oxide) caused by hot electrons is prevented.

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